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STS5DNE30L 数据表(PDF) 1 Page - STMicroelectronics |
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STS5DNE30L 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 5 page ![]() STS5DNE30L N - CHANNEL 30V - 0.039 Ω - 5A SO-8 STripFET ™ POWER MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 0.039 Ω s STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY s LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique " Single Feature Size ™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs ® INTERNAL SCHEMATIC DIAGRAM December 1998 SO-8 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain- gate Voltage (RGS = 20 k Ω) 30 V VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 oC Single Operation Drain Current (continuous) at Tc = 100 oC Single Operation 5 3.1 A A IDM( •) Drain Current (pulsed) 20 A Ptot Total Dissipation at Tc = 25 oC Dual Operation Total Dissipation at Tc = 25 oC Sinlge Operation 2 1.6 W W ( •) Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STS5DNE30L 30 V < 0.045 Ω 5 A 1/5 |
类似零件编号 - STS5DNE30L |
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类似说明 - STS5DNE30L |
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