STS7C4F30L datasheet(2/10 Pages) STMICROELECTRONICS

2 / 10 page

STS7C4F30L

2/10

THERMAL DATA

(1)

when mounted on 0.5 in2 pad of 2 oz. copper

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF

DYNAMIC

Rthj-amb(1)

Thermal Resistance Junction-ambient

Single Operation

Dual Operating

Maximum Lead Temperature For Soldering Purpose

62.5

300

°C/W

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

n-ch

p-ch

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20V

n-ch

p-ch

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 250 µA

n-ch

p-ch

1.6

2.5

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V

ID = 3.5 A

VGS = 10 V

ID = 2 A

VGS = 4.5 V

ID = 3.5 A

VGS = 4.5 V

ID = 2 A

n-ch

p-ch

n-ch

p-ch

0.018

0.070

0.021

0.085

0.022

0.080

0.026

0.10

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (*)

Forward Transconductance

VDS = 15 V

ID= 3.5 A

VDS = 15 V

ID= 2 A

n-ch

p-ch

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

n-ch

p-ch

n-ch

p-ch

n-ch

p-ch

1050

1350

250

490

130

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