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STS7DNF30L 数据表(PDF) 1 Page - STMicroelectronics |
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STS7DNF30L 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 6 page ![]() STS7DNF30L DUAL N - CHANNEL 30V - 0.018 Ω - 7A SO-8 STripFET ™ POWER MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 0.018 Ω s STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY s LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique ” Single Feature Size ™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs ® INTERNAL SCHEMATIC DIAGRAM November 1999 SO-8 ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Value Un it VDS Drain-source Volt age (VGS =0) 30 V VDGR Drain- gate Voltage (RGS =20 k Ω)30 V VGS G ate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 oC Single O perat ion Drain Current (continuous) at Tc =100 oC Single O perat ion 7 4 A A IDM( •) Drain Current (pulsed) 28 A Ptot T otal Dissipation at Tc =25 oC Dual Operation T otal Dissipation at Tc =25 oCSinlge Operation 2 1.6 W W ( •) Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STS7DNF30L 30 V < 0.022 Ω 7A 1/6 |
类似零件编号 - STS7DNF30L |
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类似说明 - STS7DNF30L |
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