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STS7NF30L 数据表(PDF) 3 Page - STMicroelectronics

部件名 STS7NF30L
功能描述  N - CHANNEL 30V - 0.021ohm - 7A SO-8 STripFET POWER MOSFET
PDF  5 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STS7NF30L 数据表(HTML) 3 Page - STMicroelectronics

  STS7NF30L Datasheet HTML 1Page - STMicroelectronics STS7NF30L Datasheet HTML 2Page - STMicroelectronics STS7NF30L Datasheet HTML 3Page - STMicroelectronics STS7NF30L Datasheet HTML 4Page - STMicroelectronics STS7NF30L Datasheet HTML 5Page - STMicroelectronics  
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V
ID = 3 A
RG = 4.7
Ω
VGS = 5 V
(Resistive Load, see fig. 3)
22
30
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 24 V ID = 7 A VGS = 4.5 V
17
4
6
23
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 15 V
ID = 3 A
RG = 4.7
Ω
VGS = 5 V
(Resistive Load, see fig. 3)
55
10
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp = 24 V
ID = 7 A
RG = 4.7
Ω
VGS = 5 V
(Inductive Load, see fig. 5)
10
18
30
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
2
8
A
A
VSD (
∗)
Forward On Voltage
ISD = 7 A
VGS = 0
1.2
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 7 A
di/dt = 100 A/
µs
VDD = 20 V
Tj = 150
oC
(see test circuit, fig. 5)
30
30
2
ns
nC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
STS7NF30L
3/5



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