STS7NF60L datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

STS7NF60L

2/8

THERMAL DATA

(#) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t

[ 10 sec.

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF

ON (*)

DYNAMIC

Rthj-amb(#)

Tstg

Thermal Resistance Junction-ambient

Maximum Operating Junction Temperature

Storage Temperature

Max

150

-55 to 150

°C/W

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16 V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 250 µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V

ID = 3.5 A

VGS = 5 V

ID = 3.5 A

0.017

0.019

0.0195

0.0215

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs

Forward Transconductance

VDS = 15 V

ID = 3.5 A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

1700

300

100

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