STT2PF60L datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

STT2PF60L

2/6

THERMAL DATA

(*) Mounted on a 1 in2 pad of 2 oz Cu in FR-4 board

(**) Mounted on a minimum pad of 2 oz Cu in FR-4 board

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF

ON (*)

DYNAMIC

Rthj-amb

Tstg

(*)Thermal Resistance Junction-ambient

(**)Thermal Resistance Junction-ambient

Max. Operating Junction Temperature

Storage Temperature

Max

156

150

-55 to 150

°C/W

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 15 V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 250 µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V

ID = 1 A

VGS = 4.5 V

ID = 1 A

0.20

0.24

0.25

0.30

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (*)

Forward Transconductance

VDS = 10 V

ID =1 A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V f = 1 MHz, VGS = 0

313

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