STT818B datasheet(2/5 Pages) STMICROELECTRONICS

2 / 5 page

THERMAL DATA

Rthj-amb

(1)

Thermal Resistance Junction-ambient

Max

104.2

oC/W

(1) Package mounted on FR4 pcb 25mm x 25mm.

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = -30 V

TC = 125

-0.1

-20

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = -5 V

-0.1

µA

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = -10 mA

-30

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = -0.5 A

IB = -5 mA

IC = -2 A

IB = -20 mA

IC = -1.2 A

IB = -20 mA

-0.075

-0.21

-0.15

-0.5

-0.25

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = -0.5 A

IB = -5 mA

IC = -1.2 A

IB = -20 mA

IC = -2 A

IB = -20 mA

-0.74

-1.1

-1.2

VBE(ON)

∗ Base-Emitter Voltage

IC = -0.5 A

VCE = -2 V

-0.71

-1.1

hFE

∗

DC Current Gain

IC = -0.5 A

VCE = -1 V

IC = -2.5 A

VCE = -3 V

100

* Pulsed: Pulse duration = 300

µs, duty cycle 1.5 %.

Safe Operating Area

Derating Curve

STT818B

2/5

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