STTA112 datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

VF*

Forward voltage drop

IF =1A

Tj = 25

°C

Tj = 125

°C

1.1

1.65

1.5

IR**

Reverse leakage current

VR = 0.8 x

VRRM

Tj = 25

°C

Tj = 125

°C90

300

µA

Vto

Threshold voltage

Ip < 3.IF(AV)

Tj = 125

°C

1.15

Dynamic resistance

350

Ω

Test pulses :

* tp = 380

µs, δ <2%

** tp = 5 ms ,

δ <2%

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test conditions

Value

Unit

Rth(j-I)

Junction to lead thermal resistance

°C/W

Conduction power dissipation

IF(AV) = 0.8A

δ = 0.5

Tlead= 93

°C

1.4

Pmax

Total power dissipation

Pmax = P1 + P3

(P3 = 10% P1)

Tlead= 90

°C

1.5

THERMAL AND POWER DATA

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

trr

Reverse recovery

time

Tj = 25

°C

IF = 0.5 A

IR = 1A

Irr = 0.25A

IF =1 A dIF/dt =-50A/

µsVR = 30V

115

IRM

Maximum recovery

current

Tj = 125

°CVR = 600V IF =1A

dIF/dt = -8 A/

µs

dIF/dt = -50 A/

µs5

1.8

S factor

Softness factor

Tj = 125

°CVR = 600V IF =1A

dIF/dt = -50 A/

µs

0.7

DYNAMIC ELECTRICAL CHARACTERISTICS

TURN-OFF SWITCHING

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

tfr

Forward recovery time

Tj = 25

°C

IF = 1 A, dIF/dt = 8 A/

µs

measured at 1.1

× VF max

900

VFp

Peak forward voltage

TURN-ON SWITCHING

To evaluate the maximum conduction losses use the following equation :

P= Vto xIF(AV) +Rd x IF

(RMS)

STTA112U

2/8

STTA112 数据表(PDF) 2 Page - STMicroelectronics

STTA112 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8

数据表下载

链接网址

STTA112 数据表(PDF) 2 Page - STMicroelectronics

STTA112 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8

数据表 下载

链接网址

数据表下载