| 数据搜索系统,热门电子元器件搜索 |
|
STTA1206DI 数据表(PDF) 6 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STTA1206DI 数据表(HTML) 6 Page - STMicroelectronics |
|
6 / 9 page ![]() STTA1206D/DI/G 6/9 Turn-on losses : (in the transistor, due to the diode) P5 = VI S F xdI dt R RM F ×× + × × 2 32 6 () + × × ×+× VI I S F xdI dt RRM L F () 2 2 Turn-off losses (in the diode) : P3 = VI S F xdI dt R RM F ×× × 2 6 P3 and P5 are suitable for power MOSFET and IGBT I I F Rd I R V R VtO V F V Fig. B: STATIC CHARACTERISTICS V I IL t TRANSISTOR dI /dt F dI /dt R tb ta I RM VR DIODE I V t trr = ta + tb S = tb / ta Fig. C: TURN-OFF CHARACTERISTICS I F V F V Fp 1.1V F V F F dI /dt 0 0t t I Fmax tfr Fig. D: TURN-ON CHARACTERISTICS Conduction losses : P1=Vt0 .IF(AV) +Rd .IF2(RMS) Reverse losses : P2=VR .IR .(1- δ) Turn-on losses : P4 = 0.4 (VFP -VF).IFmax .tfr .F APPLICATION DATA (Cont’d) |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |