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STTA206S 数据表(PDF) 6 Page - STMicroelectronics |
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STTA206S 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 8 page ![]() 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1E-2 1E-1 1E+0 1E+1 5E+1 IFM(A) Tj=125°C Tj=25°C VFM(V) Fig. 9: Forward voltage drop versus forward current (maximum values). 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 1E-2 1E-1 1E+0 Zth(j-a) (°C/W) tp(s) δ = 0.1 δ = 0.2 δ = 0.5 Single pulse T δ=tp/T tp Fig. 10: Relative variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout). 0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 trr(ns) VR=400V Tj=125°C IF=2*IF(av) IF=IF(av) dIF/dt(A/µs) Fig. 12: Reverse recovery time versus dIF/dt (90% confidence). 0 50 100 150 200 0 1 2 3 4 5 6 7 8 9 10 IRM(A) VR=400V Tj=125°C IF=2*IF(av) IF=IF(av) dIF/dt(A/µs) Fig. 11: Peak reverse recovery current versus dIF/dt (90% confidence). 25 50 75 100 125 0.7 0.8 0.9 1.0 1.1 IRM S factor Tj(°C) Fig. 14: Relative variation of dynamic parameters versus junction temperature (reference Tj=125°C). 0 20 40 60 80 100 120 140 160 180 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 S factor IF<2*IF(av) VR=400V Tj=125°C dIF/dt(A/µs) Fig. 13: Softness factor (tb/ta) versus dIF/dt (typical values). STTA206S 6/8 |
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