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STTA212S 数据表(PDF) 3 Page - STMicroelectronics |
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STTA212S 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 P1(W) δ=0.1 δ=0.2 δ=0.5 δ=1 IF(av) (A) Fig. 1: Conduction losses versus average current. 01 23 45 1E-2 1E-1 1E+0 1E+1 5E+1 IFM(A) Tj=125 °C VFM(V) Fig. 2: Forward voltage drop versus forward current (maximum values). 1E-1 1E+0 1E+1 1E+2 tp(s) Zth(j-a)( °C/W) 1E-2 5E+2 1 10 100 Fig. 3: Variation of thermal impedance junction to ambient versus pulse duration (epoxy printed cir- cuit board FR4, e(Cu)=35 µm, S(Cu)=1cm2). 0 20 40 60 80 100 120 140 160 180 200 0.60 0.80 1.00 1.20 S factor VR=600V Tj=125 °C IF<2*IF(av) dIF/dt(A/ µs) Fig. 5: Softness factor (tb/ta) versus dIF/dt (typical values). 0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 350 400 trr(ns) VR=600V Tj=125 °C IF=2*IF(av) IF=IF(av) dIF/dt(A/ µs) Fig. 6: Reverse recovery time versus dIF/dt (90% confidence). 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 IRM(A) VR=600V Tj=125 °C IF=2*IF(av) IF=IF(av) dIF/dt(A/ µs) Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). STTA212S 3/8 |
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