STTA3006CP datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

VF*

Forward voltage drop

IF =15A

Tj = 25

°C

Tj = 125

°C

1.3

1.8

1.6

IR**

Reverse leakage current

VR =0.8 x

VRRM

Tj=25

°C

Tj = 125

°C2

100

µA

Vto

Threshold voltage

Ip < 3.IAV

Tj = 125

°C

1.06

Dynamic resistance

177

Ω

Test pulse :

* tp = 380

µs, δ <2%

** tp = 5 ms,

δ <2%

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Test conditions

Value

Unit

Rth(j-c)

Junction to case

Per diode

Total

Coupling

1.9

1.0

0.1

°C/W

Conduction power dissipation

Per diode

IF(AV) = 30A

δ =0.5

Tc= 110

°C

20.5

Pmax

Total power dissipation

Pmax = P1 + P3

(P3 = 10% P1)

Per diode

Tc=105

°C

22.5

THERMAL AND POWER DATA

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

trr

Reverse

recovery time

Tj = 25

°C

IF = 0.5 A

IR = 1A

Irr = 0.25A

IF =1A dIF/dt =-50A/

µsVR = 30V

IRM

Maximum

reverse recovery

current

Tj = 125

°CVR = 400V IF = 15A

dIF/dt = -120 A/

µs

dIF/dt = -500 A/

µs

17.5

12.5

S factor

Softness factor

Tj = 125

°CVR = 400V IF = 15A

dIF/dt = -500 A/

µs

0.5

DYNAMIC ELECTRICAL CHARACTERISTICS (per diode)

TURN-OFF SWITCHING

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

tfr

Forward

recovery time

Tj = 25

°C

IF = 15A, dIF/dt = 120 A/

µs

measured at, 1.1

× VFmax

500

VFp

Peak forward

voltage

Tj = 25

°C

IF = 15A, dIF/dt = 120 A/

µs9

TURN-ON SWITCHING

To evaluate the maximum conduction losses use the following equation :

P= Vto xIF(AV) +rd x IF

(RMS)

STTA3006CW/CP

2/8

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