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STTA306B 数据表(PDF) 3 Page - STMicroelectronics |
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STTA306B 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1E-2 1E-1 1E+0 1E+1 5E+1 IFM(A) VFM(V) Tj=125°C Tj=25°C Fig. 2: Forward voltage drop versus forward current (maximum values). 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 1E-3 1E-2 1E-1 1E+0 Zth(j-a) (°C/W) tp(s) T δ=tp/T tp δ = 0.1 δ = 0.2 δ = 0.5 Single pulse Fig. 3: Relative variation of thermal transient impedance junction to ambient versus pulse duration (recommended pad layout). 0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 350 trr(ns) VR=400V Tj=125°C IF=2*IF(av) IF=IF(av) dIF/dt(A/µs) Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). 0 20 40 60 80 100 120 140 160 180 200 0 1 2 3 4 5 6 7 8 9 IRM(A) VR=400V Tj=125°C IF=2*IF(av) IF=IF(av) dIF/dt(A/µs) Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). 0 20 40 60 80 100 120 140 160 180 200 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 S factor IF<2*IF(av) VR=400V Tj=125°C dIF/dt(A/µs) Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 P1(W) IF(av) (A) δ = 0.2 δ = 0.5 δ = 1 δ = 0.05 δ = 0.1 Fig. 1: Conduction losses versus average current. STTA306B 3/8 |
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