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STTH102 数据表(PDF) 3 Page - STMicroelectronics

部件名 STTH102
功能描述  HIGH EFFICIENCY ULTRAFAST DIODE
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH102 数据表(HTML) 3 Page - STMicroelectronics

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STTH102
Characteristics
3/7
Figure 3.
Average forward current versus
ambient temperature (
δ = 0.5) (SMA)
Figure 4.
Average forward current versus
ambient temperature (
δ = 0.5)
(DO-41)
I
(A)
F(AV)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
175
R
=120°C/W
th(j-a)
R=R
th(j-a)
th(j-I)
T
δ=tp/T
tp
T
(°C)
amb
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
175
I
(A)
F(AV)
R
=110°C/W
th(j-a)
R=R
th(j-a)
th(j-I)
T
δ=tp/T
tp
T
(°C)
amb
Figure 5.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (epoxy
printed circuit board, e(Cu) = 35 µm,
recommended pad layout) (SMA)
Figure 6.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (DO-41)
Z/R
th(j-c)
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
T
δ=tp/T
tp
t (s)
p
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Z/R
th(j-c)
th(j-c)
T
δ=tp/T
tp
t (s)
p
Figure 7.
Forward voltage drop versus
forward current
Figure 8.
Junction capacitance versus
reverse voltage applied
(typical values)
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
I
(A)
FM
V
(V)
FM
T =125°C
(maximum values)
j
T =125°C
(typical values)
j
T =25°C
(maximum values)
j
1
10
100
1
10
100
1000
C(pF)
F=1MHz
V
=30mV
T =25°C
OSC
RMS
j
V (V)
R



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