STTH102RL datasheet(3/7 Pages) STMICROELECTRONICS

3 / 7 page

STTH102

Characteristics

3/7

Figure 3.

Average forward current versus

ambient temperature (

δ = 0.5) (SMA)

Figure 4.

Average forward current versus

ambient temperature (

δ = 0.5)

(DO-41)

(A)

F(AV)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

100

125

150

175

=120°C/W

th(j-a)

R=R

th(j-a)

th(j-I)

δ=tp/T

(°C)

amb

0.0

0.2

0.4

0.6

0.8

1.0

1.2

100

125

150

175

(A)

F(AV)

=110°C/W

th(j-a)

R=R

th(j-a)

th(j-I)

δ=tp/T

(°C)

amb

Figure 5.

Relative variation of thermal

impedance junction to ambient

versus pulse duration (epoxy

printed circuit board, e(Cu) = 35 µm,

recommended pad layout) (SMA)

Figure 6.

Relative variation of thermal

impedance junction to ambient

versus pulse duration (DO-41)

Z/R

th(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

δ=tp/T

t (s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Z/R

th(j-c)

δ=tp/T

t (s)

Figure 7.

Forward voltage drop versus

forward current

Figure 8.

Junction capacitance versus

reverse voltage applied

(typical values)

0.1

1.0

10.0

100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

(A)

(V)

T =125°C

(maximum values)

T =125°C

(typical values)

T =25°C

(maximum values)

100

1000

C(pF)

F=1MHz

=30mV

T =25°C

OSC

RMS

V (V)

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