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STTH102A 数据表(PDF) 4 Page - STMicroelectronics |
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STTH102A 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 7 page ![]() Characteristics STTH102 4/7 Figure 9. Reverse recovery time versus dIF/dt (90% confidence) Figure 10. Peak recovery current versus dIF/dt (90% confidence) 0 10 20 30 40 50 60 70 1 10 100 1000 t (ns) rr dI /dt(A/µs) F I =1A F V =100V T =125°C R j T =125°C j T =25°C j 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 10 100 1000 I (A) RM dI /dt(A/µs) F I =1A F V =100V T =125°C R j T =125°C j T =25°C j Figure 11. Reverse recovery charges versus dIF/dt (90% confidence) Figure 12. Relative variations of dynamic parameters versus junction temperature 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 30.0 32.5 35.0 1 10 100 1000 Q (nC) rr dI /dt(A/µs) F I =1A F V =100V R T =125°C j T =25°C j 1.0 1.5 2.0 2.5 3.0 3.5 25 50 75 100 125 150 175 I; t ; Q [T ] / RM rr rr j I ; t ; Q [T =25°C] RM rr rr j T (°C) j IRM trr QRR I=I dI /dt=200A/µs F F(AV) F V =100V R Figure 13. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35 µm) (SMA) Figure 14. Thermal resistance versus lead length (DO-41) 0 10 20 30 40 50 60 70 80 90 100 110 120 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 R (°C/W) th(j-a) S(cm²) 0 10 20 30 40 50 60 70 80 90 100 110 120 5 10 152025 R (°C/W) th L (mm) leads Rth(j-I) Rth(j-a) |
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