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STTH1302CT 数据表(PDF) 3 Page - STMicroelectronics |
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STTH1302CT 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() STTH1302CT/CG/CFP 3/7 P (W) F(AV) 0 1 2 3 4 5 6 7 8 012 3456 78 I (A) F(AV) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 T δ=tp/T tp Fig. 1: Average forward power dissipation versus average forward current (per diode). 0.1 1.0 1.E-02 1.E-01 1.E+00 1.E+01 T δ=tp/T tp tp(s) δ = 0.5 δ = 0.2 δ = 0.1 Single pulse Zth / Rth (j-c) (j-c) Fig. 4-2: Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB). 0.1 1.0 10.0 100.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 V (V) FM T =125°C Typical values j T =25°C Maximum values j I (A) FM T =125°C Maximum values j Fig. 3: Forward voltage drop versus forward cur- rent (per diode). 0 10 20 30 40 50 60 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 P=5W P=2W P=10W I (A) M δ T δ=tp/T tp IM Fig. 2: Peak current versus factor (per diode). Zth / Rth (j-c) (j-c) 0.1 1.0 1.E-03 1.E-02 1.E-01 1.E+00 δ = 0.5 δ = 0.2 δ = 0.1 Single pulse T δ=tp/T tp tp(s) Fig. 4-1: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB / D 2PAK). 0 10 20 30 40 50 60 70 80 90 100 1.E-03 1.E-02 1.E-01 1.E+00 t(s) T =25°C C T =75°C C T =125°C C I (A) M IM t δ=0.5 Fig. 5-1: Non repetitive surge peak forward cur- rent versus overload duration per diode (TO-220AB / D 2PAK). |
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