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STTH152

November 2001 - Ed:1A

HIGH EFFICIENCY ULTRAFAST DIODE

®

The STTH152 which is using ST's new 200V

planar technology, is specially suited for switching

mode base drive & transistor circuits.

The device is also intended for use as a free

wheeling diode in power supplies and other power

switching applications.

DESCRIPTION

s

Very low conduction losses

s

Negligible switching losses

s

Low forward and reverse recovery times

s

High junction temperature

FEATURES AND BENEFITS

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

200

V

Average forward current

TI = 115°C

δ = 0.5

1.5

A

Surge non repetitive forward current

tp=10 ms Sinusoidal

80

A

Storage temperature range

-65 +175

°C

Tj

Maximum operating junction temperature

175

°C

ABSOLUTE RATINGS (limiting values)

1.5 A

200 V

Tj (max)

175 °C

0.75 V

trr(max)

32 ns

MAIN PRODUCT CHARACTERISTICS

DO-15

STTH152

Symbol

Parameter

Value

Unit

Junction to ambient*

45

°C/W

* On infinite heatsink with 10mm lead length.

THERMAL RESISTANCES