STTH20003TV datasheet(3/7 Pages) STMICROELECTRONICS

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STTH20003TV

Characteristics

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Figure 1.

Conduction losses versus

average forward current (per diode)

Figure 2.

Forward voltage drop versus

forward current (per diode)

100

120

100

120

P1(W)

δ = 1

δ = 0.2

δ = 0.1

δ = 0.5

δ=t /T

δ = 0.05

I (av) (A)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

100

500

(A)

Tj=125°C

(Typical values)

Tj=25°C

Tj=125°C

(V)

Figure 3.

Relative variation of thermal

impedance junction to case versus

pulse duration

Figure 4.

Peak reverse recovery current

versus dIF/dt (90% confidence, per

diode)

1E-3

1E-2

1E-1

1E+0

5E+0

0.0

0.2

0.4

0.6

0.8

1.0

Z/R

th(j-c)

δ=t /T

Single pulse

t (s)

100 150 200 250 300 350 400 450 500

(A)

V =200V

T =125°C

I =2xI (av)

IF=I (av)

I =0.5xI (av)

dI /dt(A/µs)

Figure 5.

Reverse recovery time versus

dIF/dt (90% confidence, per diode)

Figure 6.

Softness factor (tb/ta) versus

dIF/dt (typical values, per diode)

100 150 200 250 300 350 400 450 500

100

120

140

160

180

200

220

240

260

t (ns)

V =200V

T =125°C

I =2xI (av)

I=I(av)

I =0.5xI (av)

dI /dt(A/µs)

100 150 200 250 300 350 400 450 500

0.0

0.1

0.2

0.3

0.4

0.5

0.6

S factor

V =200V

T =125°C

dI /dt(A/µs)

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