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HAF2007 数据表(PDF) 4 Page - Renesas Technology Corp

部件名 HAF2007
功能描述  Silicon N Channel MOSFET Series Power Switching
PDF  9 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

HAF2007 数据表(HTML) 4 Page - Renesas Technology Corp

  HAF2007 Datasheet HTML 1Page - Renesas Technology Corp HAF2007 Datasheet HTML 2Page - Renesas Technology Corp HAF2007 Datasheet HTML 3Page - Renesas Technology Corp HAF2007 Datasheet HTML 4Page - Renesas Technology Corp HAF2007 Datasheet HTML 5Page - Renesas Technology Corp HAF2007 Datasheet HTML 6Page - Renesas Technology Corp HAF2007 Datasheet HTML 7Page - Renesas Technology Corp HAF2007 Datasheet HTML 8Page - Renesas Technology Corp HAF2007 Datasheet HTML 9Page - Renesas Technology Corp  
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HAF2007(L), HAF2007(S)
Rev.4.00 Sep 07, 2005 page 4 of 8
Main Characteristics
40
30
20
10
0
0
50
100
150
200
500
100
200
20
50
10
2
5
1
0.5
0.3
0.3 0.5
1
2
5
10
20
50 100
25
20
15
10
5
0
2
04
6
8
10
10 V
VGS = 3.5 V
0
0
12
3
4
5
100
µs
1 ms
PW
=
10
ms
Operation in
this area is
limited by RDS (on)
5
4
3
2
1
8 V
6 V
5 V
4 V
VDS = 10 V
Pulse Test
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Pulse Test
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
0.25
0.20
0.15
0.10
0.05
0
2
04
6
8
10
500
0.1
0.2
0.5
1
2
5
10
200
100
20
50
10
1 A
ID = 2 A
0.5 A
20
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
DC
Operation
(Tc
=
25
°C)
Tc = –25
°C
25
°C
Pulse Test
VGS = 4 V
10 V
Thermal shut down
Operation area
Ta = 25
°C
75
°C



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