STTH2003CFP datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

STTH2003CT/CG/CF/CR/CFP

2/8

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

IR*

Reverse leakage

current

VR = 300 V

Tj = 25°C

µA

Tj = 125°C

300

VF**

Forward voltage drop

IF = 10 A

Tj = 25°C

1.25

Tj = 125°C

0.85

Pulse test : * tp=5ms,

δ <2%

** tp = 380

µs, δ <2%

To evaluate the maximum conduction losses use the following equation :

P=0.75xIF(AV) + 0.025 IF

(RMS)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

TO-220AB / D

2PAK / I2PAK

Per diode

2.5

°C/W

Total

1.3

ISOWATT220AB

Per diode

3.9

Total

3.2

TO-220FPAB

Per diode

4.6

Total

Rth (c)

TO-220AB / D

2PAK / I2PAK

Coupling

0.1

ISOWATT220AB

Coupling

2.5

TO-220FPAB

Coupling

3.5

THERMAL RESISTANCES

Symbol

Tests conditions

Min.

Typ.

Max.

Unit

trr

IF = 0.5 A

Irr = 0.25 A

IR =1A

Tj=25

°C

IF =1A

dIF/dt=-50A/

µsVR =30V

tfr

IF =10A

dIF/dt = 100 A/

µs

VFR =1.1xVF max.

Tj=25

°C

230

VFP

3.5

Sfactor

Vcc = 200V

IF =10A

dIF/dt = 200 A/

µs

Tj = 125°C

0.3

IRM

RECOVERY CHARACTERISTICS

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