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HAF2014 数据表(PDF) 4 Page - Renesas Technology Corp

部件名 HAF2014
功能描述  Silicon N Channel MOSFET Series Power Switching
PDF  8 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

HAF2014 数据表(HTML) 4 Page - Renesas Technology Corp

  HAF2014 Datasheet HTML 1Page - Renesas Technology Corp HAF2014 Datasheet HTML 2Page - Renesas Technology Corp HAF2014 Datasheet HTML 3Page - Renesas Technology Corp HAF2014 Datasheet HTML 4Page - Renesas Technology Corp HAF2014 Datasheet HTML 5Page - Renesas Technology Corp HAF2014 Datasheet HTML 6Page - Renesas Technology Corp HAF2014 Datasheet HTML 7Page - Renesas Technology Corp HAF2014 Datasheet HTML 8Page - Renesas Technology Corp  
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HAF2014
Rev.3.00 Apr 27, 2006 page 4 of 7
Main Characteristics
80
60
40
20
0
0
50
100
150
200
500
100
200
20
50
10
2
5
1
0.5
0.3
0.3 0.5
1
2
5
10
20
50 100
100
80
60
40
20
0
2
04
6
8
10
10 V
VGS = 3.5 V
0
0
12
3
4
5
75
°C
Ta = 25
°C
10
µs
100
µs
1 ms
PW
=
10
ms
Operation in
this area is
limited by RDS (on)
50
40
30
20
10
8 V
6 V
5 V
4 V
VDS = 10 V
Pulse Test
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Pulse Test
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
0.5
0.4
0.3
0.2
0.1
0
2
04
6
8
10
50
12
5
10
20
50
100
20
10
2
5
1
10 A
ID = 20 A
5 A
200
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
DC
Oper
ation
(Tc
=
25
°C)
Tc = –25
°C
25
°C
Pulse Test
VGS = 4 V
10 V
Thermal shut down
Operation area



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