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STTH6003CW 数据表(PDF) 2 Page - STMicroelectronics |
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STTH6003CW 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() Symbol Parameter Tests conditions Min. Typ. Max. Unit IR * Reverse leakage current VR =300 V Tj=25 °C 60 µA Tj = 125 °C 60 600 VF ** Forward voltage drop IF = 30 A Tj=25 °C 1.25 V Tj = 125 °C 0.85 1 Pulse test : * tp = 5 ms, δ <2 % ** tp = 380 µs, δ <2% To evaluate the maximum conduction losses use the following equation: P = 0.75 x IF(AV) + 0.008 x IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Value Unit Rth (j-c) Junction to case ISOTOP Per diode Total 1.4 0.75 °C/W TO-247 Per diode Total 1 0.55 Rth (c) Coupling 0.1 When the diodes 1 and 2 are used simultaneously: ∆Tj (diode 1) = P (diode 1) x Rth(j-c) (per diode) + P (diode 2) x Rth(C) THERMAL RESISTANCES Symbol Tests conditions Min. Typ. Max. Unit trr IF = 0.5 A Irr = 0.25 A IR =1A Tj = 25 °C 40 ns IF =1 A dIF/dt = - 50 A/ µsVR =30 V 55 tfr IF =30 A dIF/dt = 200 A/ µsTj = 25°C 350 ns VFP VFR = 1.1 x VF max. 5V Sfactor Vcc = 200 V IF = 30 A Tj = 125 °C 0.3 - IRM dIF/dt = 200 A/ µs 11 A RECOVERY CHARACTERISTICS STTH6003TV/CW 2/6 |
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