STTH802CT datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

STTH802/CT/CB/CFP

2/8

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

IR*

Reverse leakage

current

Tj = 25°C

VR =VRRM

µA

Tj = 125°C

VF**

Forward voltage drop

Tj = 25°C

IF = 4 A

1.1

Tj = 125°C

IF = 4 A

0.81

0.95

Tj = 25°C

IF = 8 A

1.25

Tj = 125°C

IF = 8 A

0.95

1.1

Pulse test: * tp = 5ms,

δ <2%

** tp = 380µs,

δ <2%

To evaluate the maximum conduction losses use the following equation :

P=0.80xIF(AV) + 0.037 IF

(RMS)

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Maximum

Unit

Rth (j-c)

Junction to case

TO-220AB / DPAK

Per diode

4.0

°C/W

TO-220FPAB

6.5

TO-220AB / DPAK

Total

2.5

TO-220FPAB

Rth (j-c)

Coupling

TO-220AB / DPAK

°C/W

TO-220FPAB

3.5

When the diodes 1 and 2 are used simultaneously:

∆ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

THERMAL PARAMETERS

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery

time

Tj = 25°C

IF = 0.5 A Irr = 0.25 A

IR =1A

tfr

Forward recovery

time

Tj = 25°C

IF =4A dIF/dt = 100 A/

µs

VFR =1.1xVFmax

VFP

Forward recovery

voltage

Tj = 25°C

IF =4A dIF/dt = 100 A/

µs

2.4

DYNAMIC ELECTRICAL CHARACTERISTICS

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