STTH803D datasheet(2/6 Pages) STMICROELECTRONICS

部件名	STTH803D

功能描述	HIGH FREQUENCY SECONDARY RECTIFIER

PDF	6 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2 / 6 page

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage

current

VR = 300 V

Tj = 25

°C

µA

Tj = 125

°C

200

VF **

Forward voltage drop

IF = 8 A

Tj = 25

°C

1.25

IF = 8 A

Tj = 125

°C

0.85

Pulse test : * tp = 5 ms,

δ < 2 %

** tp = 380

µs, δ < 2%

To evaluate the maximum conduction losses use the following equation :

P = 0.75 x IF(AV) + 0.031 IF

(RMS)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

2.5

°C/W

THERMAL RESISTANCES

Symbol

Tests conditions

Min.

Typ.

Max.

Unit

trr

IF = 0.5 A

Irr = 0.25 A

IR = 1 A

Tj = 25

°C

IF = 1 A

dIF/dt = - 50 A/

µs

VR = 30 V

Tj = 25

°C

tfr

IF = 8 A

dIF/dt = 100 A/

µs

VFR = 1.1 x VF max.

Tj = 25

°C

200

VFP

Tj = 25

°C

3.5

Sfactor

Vcc = 200V

IF = 8 A

dIF/dt = 200 A/

µs

Tj = 125°C

0.3

IRM

RECOVERY CHARACTERISTICS

STTH803D/G

2/6

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