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STTH802CB 数据表(PDF) 4 Page - STMicroelectronics

部件名 STTH802CB
功能描述  HIGH EFFICIENCY ULTRAFAST DIODE
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH802CB 数据表(HTML) 4 Page - STMicroelectronics

  STTH802CB Datasheet HTML 1Page - STMicroelectronics STTH802CB Datasheet HTML 2Page - STMicroelectronics STTH802CB Datasheet HTML 3Page - STMicroelectronics STTH802CB Datasheet HTML 4Page - STMicroelectronics STTH802CB Datasheet HTML 5Page - STMicroelectronics STTH802CB Datasheet HTML 6Page - STMicroelectronics STTH802CB Datasheet HTML 7Page - STMicroelectronics STTH802CB Datasheet HTML 8Page - STMicroelectronics  
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STTH802/CT/CB/CFP
4/8
0
10
20
30
40
50
60
1.E-03
1.E-02
1.E-01
1.E+00
t(s)
Tc=25°C
Tc=75°C
Tc=125°C
I (A)
M
IM
t
δ=0.5
Fig. 5-2: Non repetitive surge peak forward
current versus overload duration per diode
(TO-220FPAB).
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
25
50
75
100
125
150
175
Tamb(°C)
Rth(j-a)=Rth(j-c)
DPAK (S=0.5cm²)
Rth(j-a)=70°C:W
TO-220AB/DPAK
TO-220FPAB
I
)(A)
F(av
Fig. 6: Average forward current versus ambient
temperature (
δ = 0.5, per diode).
10
100
1
10
100
1000
VR(V)
F=1MHz
Vosc=30mV
RMS
Tj=25°C
C(pF)
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).
10
100
1000
10
100
1000
dIF/dt(A/µs)
IF=4A
VR=200V
Tj=125°C
Q
(nC)
RR
Fig. 8: Reverse recovery charges versus dIF/dt
(90% confidence, per diode).
0.1
1.0
10.0
100.0
10
100
1000
dI /dt(A/µs)
F
IF=4A
VR=200V
Tj=125°C
I
(A)
RM
Fig. 9: Peak reverse recovery current versus
dIF/dt (90% confidence, per diode).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
25
50
75
100
125
150
Tj(°C)
I
RM
Q
RR
I
F=4A
V
R=200V
Q
; I
[Tj] / Q
; I
[Tj = 125°C]
RR
RM
RR
RM
Fig. 10: Dynamic parameters versus junction
temperature.



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