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STTH806 数据表(PDF) 3 Page - STMicroelectronics |
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STTH806 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 5 page ![]() 0123456789 10 0 5 10 15 20 25 30 IF(av) (A) P1(W) T δ=tp/T tp δ = 1 δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.05 Fig. 1: Conduction losses versus average current. 012345678 1 10 100 VFM(V) IFM(A) Tj=125°C Maximum values Tj=125°C Typical values Tj=25°C Maximum values Fig. 2: Forward voltage drop versus forward current. 1E-3 1E-2 1E-1 1E+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) Zth(j-c)/Rth(j-c) T δ=tp/T tp δ = 0.5 δ = 0.2 δ = 0.1 Single pulse Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 0 50 100 150 200 250 300 350 400 450 500 0 10 20 30 40 50 60 70 80 trr(ns) VR=400V Tj=125°C IF=2*IF(av) IF=IF(av) dIF/dt(A/µs) IF=0.5*IF(av) Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). 0 50 100 150 200 250 300 350 400 450 500 0 2 4 6 8 10 dIF/dt(A/µs) IRM(A) VR=400V Tj=125°C IF=2*IF(av) IF=IF(av) IF=0.5*IF(av) Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). 0 50 100 150 200 250 300 350 400 450 500 0 20 40 60 80 100 120 140 Qrr(nC) dIF/dt(A/µs) IF=2*IF(av) IF=IF(av) IF=0.5*IF(av) VR=400V Tj=125°C Fig. 6: Reverse charges versus dIF/dt (90% confidence). STTH806TTI 3/5 |
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