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STTH8L06FP 数据表(PDF) 4 Page - STMicroelectronics |
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STTH8L06FP 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 6 page ![]() STTH8L06D/FP 4/6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 25 50 75 100 125 150 175 200 dIF/dt(A/µs) IF = IF(av) VR=400V Tj=125°C S factor Fig. 7: Softness factor versus dIF/dt (typical values). 0.00 0.25 0.50 0.75 1.00 1.25 25 50 75 100 125 Tj(°C) IRM QRR S factor IF = IF(av) VR=400V Reference: Tj=125°C Fig. 8: Relative variations of dynamic parameters versus junction temperature. 0 1 2 3 4 5 6 7 8 0 20 40 60 80 100 120 140 160 180 200 dIF/dt(A/µs) IF=IF(av) Tj=125°C VFp(V) Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence). 0 100 200 300 400 500 600 700 800 0 20 40 60 80 100 120 140 160 180 200 dIF/dt(A/µs) VR=400V Tj=125°C IF=IF(av) IF=0.5 x IF(av) IF=2 x IF(av) Qrr(nC) Fig. 6: Reverse recovery charges versus dIF/dt (90% confidence). 0 50 100 150 200 250 300 0 20 40 60 80 100 120 140 160 180 200 dIF/dt(A/µs) IF=IF(av) VFR=1.1 x VF max. Tj=125°C tfr(ns) Fig. 10: Forward recovery time versus dIF/dt (90% confidence). 1 10 100 1000 1 10 100 1000 VR(V) F=1MHz Vosc=30mV Tj=25°C C(pF) Fig. 11: Junction capacitance versus reverse voltage applied (typical values). |
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