STTH8R03D datasheet(4/6 Pages) STMICROELECTRONICS

4 / 6 page

STTH8R03G/D

4/6

100 150 200 250 300 350 400 450 500

0.0

0.1

0.2

0.3

0.4

0.5

0.6

dIF/dt(A/µs)

S factor

IF < 2 x IF(av)

VR=200V

Tj=125°C

Fig. 7:

Softness factor (tb/ta) versus dIF/dt

(typical values).

100

125

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

Tj(°C)

IRM

S factor

Fig.

Relative

variation

dynamic

parameters

versus

junction

temperature

(Reference: Tj=125°C).

100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

VFP(V)

IF=IF(av)

Tj=125°C

Fig. 9: Transient peak forward voltage versus

dIF/dt (90% confidence).

100 150 200 250 300 350 400 450 500

100

150

200

250

300

dIF/dt(A/µs)

tfr(ns)

VFR=1.1 x VF max.

IF=IF(av)

Tj=125°C

Fig. 10: Forward recovery time versus dIF/dt

(90% confidence).

S(cm²)

Rth(j-a) (°C/W)

D²PAK

Fig. 11:

Thermal resistance junction to ambient

versus copper surface under tab (Epoxy printed

circuit board FR4, copper thickness: 35µm)(D

2PAK)

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