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2SC2898 数据表(PDF) 4 Page - Renesas Technology Corp

部件名 2SC2898
功能描述  Silicon NPN Triple Diffused
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

2SC2898 数据表(HTML) 4 Page - Renesas Technology Corp

  2SC2898 Datasheet HTML 1Page - Renesas Technology Corp 2SC2898 Datasheet HTML 2Page - Renesas Technology Corp 2SC2898 Datasheet HTML 3Page - Renesas Technology Corp 2SC2898 Datasheet HTML 4Page - Renesas Technology Corp 2SC2898 Datasheet HTML 5Page - Renesas Technology Corp 2SC2898 Datasheet HTML 6Page - Renesas Technology Corp 2SC2898 Datasheet HTML 7Page - Renesas Technology Corp 2SC2898 Datasheet HTML 8Page - Renesas Technology Corp  
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2SC2898
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter sustain
voltage
V
CEO(sus)
400
—
—
V
I
C = 0.2 A, RBE = ∞,
L = 100 mH
Collector to emitter sustain
voltage
V
CEX(sus)
400
—
—
V
I
C = 8 A, IB1 = 1.6 A,
I
B2 = –0.8 A, VBE = –5 V,
L = 180
µH, Clamped
Emitter to base breakdown
voltage
V
(BR)EBO
7—
—
VI
E = 10 mA, IC = 0
Collector cutoff current
I
CBO
——
50
µAV
CB = 400 V, IE = 0
I
CEO
——
50
µAV
CE = 350 V, RBE = ∞
DC current transfer ratio
h
FE1
15
—
—
V
CE = 5 V, IC = 4 A*
1
h
FE2
7—
—
V
CE = 5 V, IC = 8 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
—
—
1.0
V
I
C = 4 A, IB = 0.8 A*
1
Base to emitter saturation
voltage
V
BE(sat)
—
—
1.5
V
Turn on time
t
on
—
—
0.8
µsI
C = 8 A, IB1 = –IB2 = 1.6 A,
Storage time
t
stg
—
—
2.0
µsV
CC ≅ 150 V
Fall time
t
f
—
—
0.8
µs
Note:
1. Pulse test
60
40
20
0
50
100
150
Case temperature TC (°C)
Maximum Collector Dissipation Curve
10
0.01
300
1,000
Collector to emitter voltage VCE (V)
Area of Safe Operation
100
1.0
0.1
13
30
10
100
I
C(max)(Continuous)
IC(peak)
Ta = 25
°C, 1 Shot



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