STU6NA90

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

PRELIMINARY DATA

s

Ω

s

± 30V GATE TO SOURCE VOLTAGE RATING

s

REPETITIVE AVALANCHE TESTED

s

LOW INTRINSIC CAPACITANCE

s

100% AVALANCHE TESTED

s

GATE CHARGE MINIMIZED

s

REDUCED THRESHOLD VOLTAGE

SPREAD

DESCRIPTION

The Max220

power package exibiting the same footprint as the

industry standard TO-220, but designed to

accomodate much larger silicon chips, normally

supplied in bigger packages. The increased die

capacity makes the device ideal to reduce

component count in multiple paralleled TO-220

designs and save board space with respect to

larger packages.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

CONSUMER AND INDUSTRIAL LIGHTING

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES (UPS)

INTERNAL SCHEMATIC DIAGRAM

TYPE

STU6NA90

900 V

< 2

Ω

5.8 A

March 1996

1

2

3

Max220

TM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

900

V

Ω)

900

V

Gate-source Voltage

± 30

V

5.8

A

3.7

A

•)

Drain Current (pulsed)

23.2

A

145

W

Derating Factor

1.16

W/

Storage Temperature

-65 to 150

Max. Operating Junction Temperature

150

(

•) Pulse width limited by safe operating area

1/5