STV160NF02L datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

THERMAL DATA

Rthj-case

Rthj-amb

T l

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Maximum Lead Temperature F or Soldering Purpose

0.9375

300

oC/W

ELECTRICAL CHARACTERISTICS (TJ =25

oC unless otherwise specified)

OFF

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =250

µAVGS =0

IDSS

Zero Gat e Voltage

Drain Current (VGS =0)

VDS =Max Rating

Tc =25

µA

IGSS

Gat e-body Leakage

Current (VDS =0)

VGS =

± 15 V

± 100

ON (

∗)

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

VGS(th)

Gat e Threshold Voltage VDS =VGS

ID = 250

µATc =25 oC1

1.7

2. 5

RDS(on)

Static Drain-source On

Resistance

VGS =10V

ID =80 A

VGS =8V

ID =80 A

VGS =4.5V ID =40 A

VGS =10V

ID =80 A

Tj =175

VGS =8V

ID =80 A

Tj =175

VGS =4.5V ID =40 A

Tj = 175

1.6

1.7

3.5

2. 5

3. 5

5. 7

11. 4

Ω

ID(o n)

On State Drain Current

VDS >ID(o n) xRDS(on )max

VGS =10 V

160

DYNAMIC

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

gfs (

∗)Forward

Transconductance

VDS >ID(o n) xRDS(on )max

ID = 80 A

210

Gat e resistance

VDS = 15V

f = 1MHz

VGS =0

0.9

Ω

Ciss

Cos s

Crss

Input Capacitance

Out put Capacitance

Reverse Transfer

Capacitance

VDS = 15V

f = 1MHz

VGS = 0

4900

2950

565

Ciss

Cos s

Crss

Input Capacitance

Out put Capacitance

Reverse Transfer

Capacitance

VDS =0 V

f =1 MHz

VGS = 0

7200

13000

4220

STV160NF02L

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