数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

HTT1129E 数据表(PDF) 3 Page - Renesas Technology Corp

部件名 HTT1129E
功能描述  Silicon NPN Epitaxial Twin Transistor
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

HTT1129E 数据表(HTML) 3 Page - Renesas Technology Corp

  HTT1129E Datasheet HTML 1Page - Renesas Technology Corp HTT1129E Datasheet HTML 2Page - Renesas Technology Corp HTT1129E Datasheet HTML 3Page - Renesas Technology Corp HTT1129E Datasheet HTML 4Page - Renesas Technology Corp HTT1129E Datasheet HTML 5Page - Renesas Technology Corp HTT1129E Datasheet HTML 6Page - Renesas Technology Corp HTT1129E Datasheet HTML 7Page - Renesas Technology Corp HTT1129E Datasheet HTML 8Page - Renesas Technology Corp HTT1129E Datasheet HTML 9Page - Renesas Technology Corp  
Zoom Inzoom in Zoom Outzoom out
 3 / 9 page
background image
HTT1129E
Rev.2.00 Aug 10, 2005 page 3 of 8
Q1 Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
15
⎯
⎯
V
IC = 10
µA, IE = 0
Collector cutoff current
ICBO
⎯
⎯
0.1
µA
VCB = 15 V, IE = 0
Collector cutoff current
ICEO
⎯
⎯
0.1
µA
VCE = 6 V, RBE = infinite
Emitter cutoff current
IEBO
⎯
⎯
0.1
µA
VEB = 1.5 V, IC = 0
DC current transfer ratio
hFE
90
120
140
⎯
VCE = 1 V, IC = 5 mA
Reverse transfer capacitance
Cre
⎯
0.50
0.65
pF
VCB = 1 V, f = 1 MHz
Emitter ground
Gain bandwidth product
fT
2
4
⎯
GHz
VCE = 1 V, IC = 5 mA, f = 1 GHz
Forward transfer coefficient
|S21|
2
7
11
⎯
dB
Noise figure
NF
⎯
1.7
2.3
dB
VCE = 1 V, IC = 5 mA,
f = 900 MHz,
ΓS = ΓL = 50 Ω
Q2 Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
16
⎯
⎯
V
IC = 10
µA, IE = 0
Collector cutoff current
ICBO
⎯
⎯
0.1
µA
VCB = 15 V, IE = 0
Collector cutoff current
ICEO
⎯
⎯
0.1
µA
VCE = 6 V, RBE = infinite
Emitter cutoff current
IEBO
⎯
⎯
0.1
µA
VEB = 0.8 V, IC = 0
DC current transfer ratio
hFE
90
120
140
⎯
VCE = 1 V, IC = 5 mA
Reverse transfer capacitance
Cre
⎯
0.25
0.35
pF
VCB = 1 V, f = 1 MHz
Emitter ground
Gain bandwidth product
fT
8
10
⎯
GHz
VCE = 1 V, IC = 5 mA, f = 1 GHz
Forward transfer coefficient
|S21|
2
13
16
⎯
dB
Noise figure
NF
⎯
1.0
1.6
dB
VCE = 1 V, IC = 5 mA,
f = 900 MHz
ΓS = ΓL = 50 Ω



Html Pages

1 2 3 4 5 6 7 8 9


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com