HTT1213E datasheet(2/4 Pages) RENESAS

部件名	HTT1213E

功能描述	Silicon NPN Epitaxial Twin Transistor

PDF	4 Pages

Scroll/Zoom	100%

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

2 / 4 page

HTT1213E

Rev.1.00, Feb.07.2005, page 2 of 3

Electrical Characteristics (Q1 and Q2)

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V(BR)CBO



IC = 10

µA, IE = 0

Collector cutoff current

ICBO



0.1

µA

VCB = 15 V, IE = 0

Collector cutoff current

ICEO



µA

VCE = 4 V, RBE = infinite

Emitter cutoff current

IEBO



0.1

µA

VEB = 0.8 V, IC = 0

DC current transfer ratio

hFE

100

130

150



VCE = 1 V, IC = 5 mA

Reverse transfer capacitance

Cre



0.30

0.45

VCB = 1 V, f = 1 MHz

Emitter ground

Gain bandwidth product



GHz

VCE = 1 V, IC = 5 mA, f = 1 GHz

Forward transfer coefficient

|S21|



Noise figure



1.0

1.7

VCE = 1 V, IC = 5 mA,

f = 900 MHz,

ΓS = ΓL = 50 Ω

HTT1213E 数据表(PDF) 2 Page - Renesas Technology Corp

HTT1213E 数据表(HTML) 2 Page - Renesas Technology Corp

Html Pages

1 2 3 4

数据表下载