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HVB14S 数据表(PDF) 2 Page - Renesas Technology Corp |
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HVB14S 数据表(HTML) 2 Page - Renesas Technology Corp |
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2 / 5 page ![]() HVB14S Rev.2.00 Dec 15, 2004 page 2 of 4 Absolute Maximum Ratings *1 (Ta = 25 °C) Item Symbol Value Unit Reverse voltage VR 50 V Forward current IF 50 mA Power dissipation Pd 100 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Note: 1. Absolute maximum ratings are described each unit separately. Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 100 nA VR = 50 V Forward voltage VF — — 1.0 V IF = 50 mA Capacitance C — 0.25 — pF VR = 50 V, f = 1 MHz Forward resistance rf — — 7 Ω IF = 10 mA, f = 100 MHz ESD-Capability * 1 — 200 — — V C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Notes : 1. Per one device. 2. Failure criterion; IR ≥ 200 nA at VR = 50 V |
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