HSM223C datasheet(2/5 Pages) RENESAS

部件名	HSM223C

功能描述	Silicon Epitaxial Planar Diode for High Speed Switching

PDF	5 Pages

Scroll/Zoom	100%

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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2 / 5 page

HSM223C

Rev.5.00 Mar 10, 2005 page 2 of 4

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Peak reverse voltage

VRM

Reverse voltage

Peak forward current

IFM

300

Non-Repetitive peak forward surge current

IFSM *

Average rectified current

100

Junction temperature

125

°C

Storage temperature

Tstg

−55 to +125

°C

Note:

1. Value at duration of 1

µs.

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

VF1

—

0.76

1.0

IF = 10 mA

VF2

—

0.88

1.0

IF = 50 mA

Forward voltage

VF3

—

0.97

1.2

IF = 100 mA

Reverse current

—

0.1

µA

VR = 80 V

Capacitance

—

0.5

2.0

VR = 0 V, f = 1 MHz

Reverse recovery time

trr

—

3.0

IF = 10 mA, VR = 6 V, RL = 50

Ω

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