HSM276ASR datasheet(2/5 Pages) RENESAS

部件名	HSM276ASR

功能描述	Silicon Schottky Barrier Diode for Balanced Mixer

PDF	5 Pages

Scroll/Zoom	100%

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

2 / 5 page

HSM276ASR

Rev.1.00 Apr 25 page 2 of 4

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Repetitive peak reverse voltage

VRRM

Reverse voltage

Average rectified current

Junction temperature

125

°C

Storage temperature

Tstg

−55 to +125

°C

Note:

1. Per one device

Electrical Characteristics *1

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse voltage

—

IR = 1 mA

Reverse current

—

µA

VR = 0.5 V

Forward current

—

VF = 0.5V

Capacitance

—

0.90

VR = 0.5 V, f = 1 MHz

Capacitance deviation

∆C

—

0.10

VR = 0.5 V, f = 1 MHz

ESD-Capability *

—

C = 200 pF, R = 0

Ω , Both forward and

reverse direction 1 pulse.

Notes: 1. Per one device

2. Failure criterion ; IR

≥ 100 µA at VR = 0.5 V

HSM276ASR 数据表(PDF) 2 Page - Renesas Technology Corp

HSM276ASR 数据表(HTML) 2 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5

数据表下载