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HAT2218R 数据表(PDF) 2 Page - Renesas Technology Corp |
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HAT2218R 数据表(HTML) 2 Page - Renesas Technology Corp |
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2 / 10 page  HAT2218R Rev.3.00, Aug.23.2004, page 2 of 9 Electrical Characteristics • MOS1 (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 Gate to source leak current IGSS —— ±0.1 µAVGS = ±20 V, VDS = 0 Zero gate voltage drain current IDSS —— 1 µAVDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V VDS = 10 V, I D = 1 mA RDS(on) —19 24 m Ω ID = 3.75 A, VGS = 10 V Note3 Static drain to source on state resistance RDS(on) —27 40 m Ω ID = 3.75 A, VGS = 4.5 V Note3 Forward transfer admittance |yfs|9 15 — S ID = 3.75 A, VDS = 10 V Note3 Input capacitance Ciss — 630 — pF Output capacitance Coss — 155 — pF Reverse transfer capacitance Crss — 57 — pF VDS = 10 V VGS = 0 f = 1MHz Total gate charge Qg — 4.6 — nC Gate to source charge Qgs — 2.2 — nC Gate to drain charge Qgd — 1.2 — nC VDD = 10 V VGS = 4.5 V ID = 7.5 A Turn-on delay time td(on) —7— ns Rise time tr —14— ns Turn-off delay time td(off) —36— ns Fall time tf —3.4 — ns VGS =10 V, ID = 3.75 A VDD ≈ 10 V RL = 2.66 Ω Rg = 4.7 Ω Body–drain diode forward voltage VDF — 0.85 1.11 V IF = 7.5 A, VGS = 0 Note3 Body–drain diode reverse recovery time trr — 17 — ns IF =7.5 A, VGS = 0 diF/ dt = 100 A/ µs Notes: 3. Pulse test • MOS2 & Schottky Barrier Diode (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 Gate to source leak current IGSS —— ±0.1 µAVGS = ±12 V, VDS = 0 Zero gate voltage drain current IDSS —— 1 m A VDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.4 — 2.5 V VDS = 10 V, I D =1 mA RDS(on) —17 22 m Ω ID =4 A, VGS = 10 V Note3 Static drain to source on state resistance RDS(on) —21 29 m Ω ID = 4 A, VGS = 4.5 V Note3 Forward transfer admittance |yfs|15 25 — S ID = 4 A, VDS = 10 V Note3 Input capacitance Ciss — 1330 — pF Output capacitance Coss — 230 — pF Reverse transfer capacitance Crss — 92 — pF VDS = 10 V VGS = 0 f = 1MHz Total gate charge Qg — 11 — nC Gate to source charge Qgs — 3.8 — nC Gate to drain charge Qgd — 3.2 — nC VDD = 10 V VGS = 4.5 V ID = 8 A Turn-on delay time td(on) —10— ns Rise time tr —16— ns Turn-off delay time td(off) —43— ns Fall time tf —3.9 — ns VGS = 10 V, ID = 4 A VDD ≈ 10 V RL = 2.5 Ω Rg = 4.7 Ω Schottky Barrier diode forward voltage VF — 0.5 — V IF = 3.5 A, VGS = 0 Note3 Body–drain diode reverse recovery time trr —15— ns IF = 8 A, VGS = 0 diF/ dt = 100 A/ µs Notes: 3. Pulse test |
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