BB503C datasheet(5/11 Pages) RENESAS

部件名	BB503C

功能描述	Built in Biasing Circuit MOS FET IC UHF RF Amplifier

PDF	11 Pages

Scroll/Zoom	100%

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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5 / 11 page

BB503C

Rev.5.00 Aug 10, 2005 page 5 of 10

200

150

100

150

200

VG2S = 4 V

VG1 = VDS

VDS = 5 V

RG = 33 kΩ

VDS = 5 V

RG = 47 kΩ

Ambient Temperature Ta (

°C)

Maximum Channel Power

Dissipation Curve

Typical Output Characteristics

Drain to Source Voltage VDS (V)

Drain Current vs. Gate1 Voltage

Gate1 Voltage VG1 (V)

Drain Current vs. Gate1 Voltage

Gate1 Voltage VG1 (V)

R G

kΩ

68 kΩ

100 kΩ

2 V

VG2S = 1 V

4 V

3 V

VG2S = 1 V

3 V

4 V

2 V

VDS = 5 V

RG = 68 kΩ

VDS = 5 V

RG = 33 kΩ

f = 1 kHz

Drain Current vs. Gate1 Voltage

Gate1 Voltage VG1 (V)

Forward Transfer Admittance

vs. Gate1 Voltage

2 V

VG2S = 1 V

3 V

4 V

2 V

3 V

VG2S = 1 V

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