STW12NB60 datasheet(1/8 Pages) STMICROELECTRONICS

部件名	STW12NB60

功能描述	N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh?줚I MOSFET

PDF	8 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 8 page

1/8

May 2001

STW12NB60

N-CHANNEL 600V - 0.5

Ω - 12A TO-247

PowerMesh™II MOSFET

s

TYPICAL RDS(on) = 0.5Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprieraty edge termi-

nation structure, gives the lowest RDS(on) per area,

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

TYPE

VDSS

RDS(on)

ID

STW12NB60

600V

< 0.6

Ω

12 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

600

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

600

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuos) at TC = 25°C

12

A

ID

Drain Current (continuos) at TC = 100°C

7.56

A

IDM (q)

Drain Current (pulsed)

48

A

PTOT

Total Dissipation at TC = 25°C

190

W

Derating Factor

1.52

W/°C

dv/dt(1)

Peak Diode Recovery voltage slope

4

V/ns

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

(1)ISD ≤12A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

TO-247

1

2

3

INTERNAL SCHEMATIC DIAGRAM

类似零件编号 - STW12NB60

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	STW12NB60	351Kb / 2P	isc N-Channel MOSFET Transistor

More results

类似说明 - STW12NB60

制造商	部件名	数据表	功能描述
STMicroelectronics	STGW12NB60H	86Kb / 8P	N-CHANNEL 12A - 600V TO-247 PowerMESH IGBT Jun-1999
	STGW12NB60HD	90Kb / 8P	N-CHANNEL 12A - 600V TO-247 PowerMESH IGBT Jun-1999
	STP2HNC60	328Kb / 9P	N-CHANNEL 600V - 4ohm - 2.2A TO-220/TO-220FP PowerMesh™ I MOSFET May-2001
	STQ1HNC60	116Kb / 6P	N-CHANNEL 600V - 7ohm - 0.4A TO-92 PowerMesh™ I MOSFET Aug-2001
	STU11NB60	46Kb / 5P	N-CHANNEL 600V - 0.5ohm - 11A - Max220 PowerMESH MOSFET Jan-1999
	STW10NB60	93Kb / 8P	N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET Oct-1998
	STW10NC60	337Kb / 9P	N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET Feb-2002
	STW12NC60	86Kb / 8P	N-CHANNEL 600V - 0.48ohm - 12A TO-247 PowerMeshII MOSFET Jun-2000
	STW16NB60	252Kb / 8P	N-CHANNEL 600V - 0.3ohm - 16A TO-247 PowerMesh™ MOSFET Apr-2003
	STW20NC50	249Kb / 8P	N-CHANNEL 500V - 0.22ohm - 18.4A TO-247 PowerMesh™ I MOSFET May-2001