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BCR08AS 数据表(PDF) 2 Page - Renesas Technology Corp

部件名 BCR08AS
功能描述  MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
PDF  6 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

BCR08AS 数据表(HTML) 2 Page - Renesas Technology Corp

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Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
•IT (RMS) ..................................................................... 0.8A
•VDRM ....................................................................... 600V
•IFGT !, IRGT !, IRGT # .............................................. 5mA
•IFGT # ..................................................................... 10mA
BCR08AS
APPLICATION
Hybrid IC, solid state relay,
control of household equipment such as electric fan · washing machine,
other general purpose control applications
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360
° conduction, Ta=40°C ✽3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A2s
W
W
V
A
°C
°C
mg
Ratings
0.8
8
0.26
1
0.1
6
1
–40 ~ +125
–40 ~ +125
48
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ✽1
Non-repetitive peak off-state voltage ✽1
Voltage class
12 (marked “BF”)
600
720
Unit
V
V
MAXIMUM RATINGS
✽1. Gate open.
2
1
3
1
2
3
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
4.4±0.1
1.5±0.1
1.6±0.2
0.4±0.07
0.4
+0.03
–0.05
1
2
3
(Back side)
OUTLINE DRAWING
Dimensions
in mm
SOT-89
0.5±0.07
1.5±0.1 1.5±0.1



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