Mar. 2002

MITSUBISHI SEMICONDUCTOR

〈TRIAC〉

BCR5KM

MEDIUM POWER USE

INSULATED TYPE, PLANAR PASSIVATION TYPE

➁

➀

➂

Measurement point of

case temperature

✽

➀

➁

➂

GATE TERMINAL

10

± 0.3

2.8

± 0.2

φ 3.2 ± 0.2

1.1

± 0.2

1.1

± 0.2

0.75

± 0.15

2.54

± 0.25

2.54

± 0.25

0.75

± 0.15

➀➁ ➂

E

BCR5KM

OUTLINE DRAWING

Dimensions in mm

TO-220FN

APPLICATION

Control of heater such as electric rice cooker, electric pot

q

q

q

q

UL Recognized: Yellow Card No.E80276(N)

File No. E80271

✽1. Gate open.

—

Symbol

A

A

W

W

V

A

°C

°C

g

V

5

50

10.4

3

0.3

10

2

–40 ~ +125

–40 ~ +125

2.0

2000

Symbol

V

V

MAXIMUM RATINGS

Value corresponding to 1 cycle of half wave 60Hz, surge on-state

current

RMS on-state current

Surge on-state current

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

Peak gate current

Junction temperature

Storage temperature

Weight

Isolation voltage

Parameter

Parameter

Voltage class

Unit

Ratings

Unit

Conditions

Commercial frequency, sine full wave 360

° conduction, Tc=103°C

60Hz sinewave 1 full cycle, peak value, non-repetitive

12

600

720

Refer to the page 6 as to the product guaranteed

maximum junction temperature 150

°C