STW14NB50 datasheet(1/5 Pages) STMICROELECTRONICS

部件名	STW14NB50

功能描述	N-CHANNEL 500V - 0.40 ohm - 14A - TO-247 PowerMESH MOSFET

PDF	5 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STW14NB50

N-CHANNEL 500V - 0.40

Ω - 14A - TO-247

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.40

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

GATE CHARGE MINIMIZED

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced

family

of

power

MOSFETs

with

outstanding

performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)at Tc = 100

oC

500

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)at Tc = 100 oC

500

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc = 25

oC14

A

ID

Drain Current (continuous) at Tc = 100

oC8

A

IDM(

•)

Drain Current (pulsed)

52

A

Ptot

Total Dissipation at Tc = 25

o C

190

W

Derating Factor

1.51

W/

o C

dv/dt(1)

Peak Diode Recovery voltage slope

4

V/ns

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

(1) ISD

≤14 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

April 1999

TYPE

VDSS

RDS(on)

ID

STW14NB50

500 V

< 0.45

Ω

14 A

1

2

3

TO-247

1/5

类似零件编号 - STW14NB50

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