STH13NB60 datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STH13NB60

功能描述	N - CHANNEL 600V - 0.48ohm - 13A - TO-247/ISOWATT218 PowerMESH MOSFET

PDF	9 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STW13NB60

STH13NB60FI

N - CHANNEL 600V - 0.48

Ω - 13A - TO-247/ISOWATT218

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.48

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

January 2000

TO-247

ISOWATT218

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

STW 13NB60

STH13NB60FP

VDS

Drain-source Voltage (VGS =0)

600

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

600

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC13

8.6

A

ID

Drain Current (continuous) at Tc =100

oC8.2

5.4

A

IDM (

•)

Drain Current (pulsed)

52

A

Ptot

T otal Dissipation at Tc =25

oC

190

80

W

Derating Factor

1.52

0.64

W /

o C

dv/dt (1)

Peak Diode Recovery volt age slope

4

V/ns

VISO

I nsulat ion W ithstand Voltage (DC)



2000

V

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 13 A, di/dt ≤ 200 Α/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

ST W13NB60

ST H13NB60FI

600 V

<0.54

Ω

<0.54

Ω

13 A

8.6 A

1

2

3

1

2

3

1/9

类似零件编号 - STH13NB60

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	STH13NB60FI	343Kb / 2P	isc N-Channel MOSFET Transistor

More results

类似说明 - STH13NB60

制造商	部件名	数据表	功能描述
STMicroelectronics	STP13NK60Z	657Kb / 14P	N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™Power MOSFET Feb-2003
	STW10NB60	93Kb / 8P	N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET Oct-1998
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	STW15NB50	110Kb / 9P	N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET Jun-1998
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	STGF20NB60S	293Kb / 10P	N-CHANNEL 13A - 600V TO-220FP PowerMESH IGBT 17-Dec-2004