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STW16NB60 数据表(PDF) 3 Page - STMicroelectronics

部件名 STW16NB60
功能描述  N-CHANNEL 600V - 0.3ohm - 16A TO-247 PowerMesh™ MOSFET
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STW16NB60 数据表(HTML) 3 Page - STMicroelectronics

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STW16NB60
Safe Operating Area
Thermal Impedance
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
Rise Time
VDD = 300V, ID =8 A
RG = 4.7Ω,VGS = 10V
(see test circuit, Figure 3)
35
ns
tr
16
ns
Qg
Total Gate Charge
VDD = 480V, ID =16 A,
VGS =10V,RG =4.7Ω
80
105
nC
Qgs
Gate-Source Charge
19.5
nC
Qgd
Gate-Drain Charge
35
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD =480V, ID =16 A,
RG = 4.7Ω, VGS =10V
(see test circuit, Figure 5)
15
ns
tf
Fall Time
12
ns
tc
Cross-over Time
30
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
16
A
ISDM (2)
Source-drain Current (pulsed)
64
A
VSD (1)
Forward On Voltage
ISD =16 A,VGS =0
1.6
V
trr
Reverse Recovery Time
ISD = 16 A, di/dt = 100 A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
800
ns
Qrr
Reverse Recovery Charge
11
µC
IRRM
Reverse Recovery Current
27
A



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