STW200NF03 datasheet(1/8 Pages) STMICROELECTRONICS

部件名	STW200NF03

功能描述	N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET™ II MOSFET

PDF	8 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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October 2002

STW200NF03

N-CHANNEL 30V - 0.002

Ω - 120A TO-247

ULTRA LOW ON-RESISTANCE STripFET™ II MOSFET

s

TYPICAL RDS(on) = 0.002 Ω

s

100% AVALANCHE TESTED

DESCRIPTION

This Power MOSFET series realized with STMicroelec-

tronics unique STripFET process has specifically been

designed to minimize input capacitance and gate charge.

It is particularly suitable in OR-ing function circuits and

synchronous rectification.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

HIGH CURRENT, HIGH SWITCHING SPEED

s

OR-ING FUNCTION

TYPE

VDSS

RDS(on)

ID

STW200NF03

30V

<0.0028

Ω

120A

1

2

3

TO-247

ABSOLUTE MAXIMUM RATINGS

(

••) Pulse width limited by safe operating area.

(

•)Current limited by package

(1) ISD ≤120A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(2) Starting Tj = 25 oC, ID = 60 A, VDD= 15V

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

30

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

30

V

VGS

Gate- source Voltage

± 20

V

ID(•)

Drain Current (continuous) at TC = 25°C

120

A

ID

Drain Current (continuous) at TC = 100°C

120

A

IDM(••)

Drain Current (pulsed)

480

A

Ptot

Total Dissipation at TC = 25°C

350

W

Derating Factor

2.33

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

1.5

V/ns

EAS (2)

Single Pulse Avalanche Energy

4

J

Tstg

Storage Temperature

-55 to 175

°C

Tj

Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM

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