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STW26NM50 数据表(PDF) 3 Page - STMicroelectronics

部件名 STW26NM50
功能描述  N-CHANNEL 500V - 0.10ohm - 26A TO-247 Zener-Protected MDmesh™ Power MOSFET
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STW26NM50 数据表(HTML) 3 Page - STMicroelectronics

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STW26NM50
Table 7: On /Off
Table 8: Dynamic
Table 9: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source Breakdown
Voltage
ID = 250 mA, VGS = 0
500
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125°C
10
100
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
3
4
5V
RDS(on
Static Drain-source On
Resistance
VGS = 10 V, ID = 13 A
0.10
0.12
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS = 15 V , ID = 13 A
20
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
3000
700
50
pF
pF
pF
COSS eq (3).
Equivalent Output
Capacitance
VGS = 0 V, VDS = 0 to 400 V
300
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
VDD = 250 V, ID = 13 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
28
15
13
19
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400 V, ID = 26 A,
VGS = 10 V
(see Figure 18)
76
20
36
106
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
26
104
A
A
VSD (1)
Forward On Voltage
ISD = 26 A, VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 26 A, di/dt = 100 A/µs
VDD = 100V
(see Figure 16)
400
5.5
27.8
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 26 A, di/dt = 100 A/µs
VDD = 100V, Tj = 150°C
(see Figure 16)
492
7
28.8
ns
µC
A



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