STW34NB20 datasheet(1/8 Pages) STMICROELECTRONICS

部件名	STW34NB20

功能描述	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

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STW34NB20

N - CHANNEL ENHANCEMENT MODE

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.062

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process,

SGS-Thomson

has

designed

an

advanced

family

of

power

MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

s

HIGH CURRENT, HIGH SPEED SWITCHING

INTERNAL SCHEMATIC DIAGRAM

January 1998

1

2

3

TO-247

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

VDS

Drain-source Volt age (VGS =0)

200

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

200

V

VGS

Gat e-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

o C34

A

ID

Drain Current (continuous) at Tc =100

oC21

A

IDM(

•)

Drain Current (pulsed)

136

A

Ptot

Tot al Dissipation at Tc =25

oC180

W

Derating F act or

1.44

W/

oC

Tstg

Storage T emperat ure

-65 to 150

oC

Tj

Max. O perating Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

(1)ISD

≤34A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STW 34NB20

200 V

< 0.075

Ω

34 A

1/8

类似零件编号 - STW34NB20

制造商	部件名	数据表	功能描述
STMicroelectronics	STW34NB20	232Kb / 10P	N-CHANNEL 200V - 0.062 OHM - 34A TO-247 PowerMESH MOSFET 14-Apr-2004
Inchange Semiconductor ...	STW34NB20	352Kb / 2P	isc N-Channel MOSFET Transistor
STMicroelectronics	STW34NB20	232Kb / 10P	N-CHANNEL 200V - 0.062 OHM - 34A TO-247 PowerMESH MOSFET 14-Apr-2004

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