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STW45NM50FD 数据表(PDF) 3 Page - STMicroelectronics

部件名 STW45NM50FD
功能描述  N-CHANNEL 500V - 0.07ohm - 45A TO-247 FDmesh?줡ower MOSFET With FAST DIODE
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STW45NM50FD 数据表(HTML) 3 Page - STMicroelectronics

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STW45NM50FD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 250V, ID = 22.5A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
28
ns
tr
Rise Time
28
ns
Qg
Total Gate Charge
VDD = 400V, ID = 45A,
VGS = 10V
92
120
nC
Qgs
Gate-Source Charge
22
nC
Qgd
Gate-Drain Charge
40
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 400V, ID = 45A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
11
ns
tf
Fall Time
25
ns
tc
Cross-over Time
44
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
45
A
ISDM (2)
Source-drain Current (pulsed)
180
A
VSD (1)
Forward On Voltage
ISD = 45A, VGS = 0
1.5
V
trr
Reverse Recovery Time
ISD = 45A, di/dt = 100A/µs,
VDD = 100V
(see test circuit, Figure 5)
245
ns
Qrr
Reverse Recovery Charge
2.2
µC
IRRM
Reverse Recovery Current
18
A
Safe Operating Area
Thermal Impedence



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