STW50NB20 datasheet(1/8 Pages) STMICROELECTRONICS

部件名	STW50NB20

功能描述	N - CHANNEL 200V - 0.047ohm - 50A - TO-247 PowerMESH MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STW50NB20

N - CHANNEL 200V - 0.047

Ω - 50A - TO-247

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.047

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

± 30V GATE TO SOURCE VOLTAGE RATING

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using

the

latest

high

voltage

technology,

STMicroelectronics has designed an advanced

family

of

power

Mosfets

with

outstanding

performances. The new patent pending strip

layout coupled with the Company’s proprietary

edge termination structure, gives the lowest

RDS(on) per area, exceptional avalanche and

dv/dt capabilities and unrivalled gate charge and

switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

October 1999

1

2

3

TO-247

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS =0)

200

V

VDGR

Drain- gat e Voltage (RGS =20 k

Ω)

200

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC50

A

ID

Drain Current (continuous) at Tc = 100

oC32

A

IDM(

•)

Drain Current (pulsed)

200

A

Ptot

T otal Dissipat ion at Tc =25

oC280

W

Derating F act or

2.24

W /

o C

dv/dt( 1)

Peak Diode Recovery voltage slope

4

V/ns

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. O perating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 50 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STW 50NB20

200 V

< 0. 055

Ω

50 A

1/8

类似零件编号 - STW50NB20

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	STW50NB20	351Kb / 2P	isc N-Channel MOSFET Transistor

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